Gate-All-Around Tunnel Field-Effect Transistor (GAA TFET) with Vertical Channel and n-doped Layer
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概要
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We propose a vertical gate-all-around tunnel field-effect transistor (GAA TFET) having a n-doped layer and investigate its electric characteristics with device simulation. By introducing the n-doped layer at source junction, band-to-band tunneling area is increased and energy barrier width is decreased. Also, surrounding gate structure improves the gate controllability, which makes it possible to obtain more abrupt band-bending induced by gate bias. The device shows subthreshold swing at I_d=1nA/μm of 32.5mV/dec, average subthreshold swing of 20.6mV/dec. With comparison with other TFET devices, the strength of the proposed device is demonstrated and performance dependences on device parameters are characterized.
- 2009-06-17
著者
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Lee D.
Inter-University Semiconductor Research Center (ISRC)
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Yang H.-S.
Inter-University Semiconductor Research Center (ISRC)
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Kang K.
Inter-University Semiconductor Research Center (ISRC)
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Lee J.-E.
Inter-University Semiconductor Research Center (ISRC)
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Lee J.
Inter-University Semiconductor Research Center (ISRC)
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Park B.-g
Inter-university Semiconductor Research Center (isrc):school Of Electrical Engineering And Computer
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Lee J.-e.
Inter-university Semiconductor Research Center (isrc):school Of Electrical Engineering And Computer
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Yang H.-s.
Inter-university Semiconductor Research Center (isrc):school Of Electrical Engineering And Computer
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Lee J.
School Of Advanced Materials Science And Engineering And Skku Advanced Institute Of Nanotechnology S
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Lee D.
Inter-university Semiconductor Research Center (isrc):school Of Electrical Engineering And Computer
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Park B.-G.
Inter-University Semiconductor Research Center (ISRC)
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Kang K.
Inter-university Semiconductor Research Center (isrc):school Of Electrical Engineering And Computer
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