Hydrogen-Induced Degradation Mechanisms in Ferroelectric PbZr_<0.4>Ti_<0.6>O_3 and Bi_<3.25>La_<0.75>Ti_3O_<12> Thin Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-11-30
著者
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Yoon J‐g
Seoul National Univ. Seoul Kor
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Yoon Jong-gul
Center For Oxide Electronics And School Of Physics Seoul National University:department Of Phy Ics U
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Kim Jung
Center For Oxide Electronics And School Of Physics Seoul National University
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Noh T
Seoul National Univ. Seoul Kor
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Noh Tae
Center For Oxide Electronics And School Of Physics Seoul National University
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Seo S.
School Of Physics And Research Center For Oxide Electronics Seoul National University
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Kang B.
School Of Physics And Research Center For Oxide Electronics Seoul National University
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SEO Sunae
Center for Oxide Electronics and School of Physics, Seoul National University
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KANG Bo
Center for Oxide Electronics and School of Physics, Seoul National University
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LEE Yong
Microelecrronics Lab, SAIT
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PARK Young
Microelecrronics Lab, SAIT
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Lee Yong
Microelecrronics Lab Sait
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Park Young
Microelecrronics Lab Sait
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- Dynamical Aspects of Retention and its Relation to Fatigue in Ferroelectric Thin Films
- Electrical Properties of Sol-Gel Deposited BaTiO_3 Thin Films on Si(100) Substrates
- High Resistance Against Hydrogen-Induced Degradation in Ferroelectric Bi_La_Ti_3O_Thin Films
- Hydrogen-Induced Degradation Mechanisms in Ferroelectric PbZr_Ti_O_3 and Bi_La_Ti_3O_ Thin Films
- Extraction method of the interface and nitride trap density in nitride-based charge trapped flash memories using an optical response (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Extraction method of the interface and nitride trap density in nitride-based charge trapped flash memories using an optical response (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Retention Characteristics of Bi_La_Ti_3O_ Thin Films