Retention Characteristics of Bi_<3.25>La_<0.75>Ti_3O_<12> Thin Films

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概要

• 論文の詳細を見る

• Polarization retention characteristics of ferroelectric Bi_<3.25>La_<0.75>Ti_3O_<12> (BLT) thin films, fabricated on Pt/TiO_2/SiO_2/Si substrates by pulsed laser deposition, have been investigated. The retained polarization showed a power-law-like decay within one second of writing and the normalized retained polarization was well scaled with respect to the initial polarization regardless of the write/read pulse fields. Thermally accelerated retention failure tests, performed at I 20℃ for 3.6 x 10^5 s, showed that the BLT films had quite good retention characteristics, retaining 85% of the value measured at t = 1 s. It was also found that there was an accompanying imprint phenomenon during the retention test. However, the retention loss cannot be explained solely by imprint but polarization charge compensation by redistribution of defect charges should also be considered.

• 社団法人応用物理学会の論文
• 2002-08-15

著者

• Seo S.

  School Of Physics And Research Center For Oxide Electronics Seoul National University

• Kang B.

  School Of Physics And Research Center For Oxide Electronics Seoul National University

• YOON J.-G.

  School of Physics and Research Center for Oxide Electronics, Seoul National University

• SONG T.

  Department of Ceramic Science and Engineering, Changwon National University

• SO Y.

  School of Physics and Research Center for Oxide Electronics, Seoul National University

• NOH T.

  School of Physics and Research Center for Oxide Electronics, Seoul National University

• Yoon J.-g.

  School Of Physics And Research Center For Oxide Electronics Seoul National University

• Yoon J.

  School Of Material Science & Engineering Seoul National University

• Noh T.

  School Of Physics And Research Center For Oxide Electronics Seoul National University

• Seo S.

  School Of Electrical Engineering Kookmin University

• Song T.

  Department Of Ceramic Science And Engineering Changwon National University

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