Electron Scattering Rates in AlGaN/GaN Quantum Wells for 1.55-μm Inter-Subband Transition
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概要
- 論文の詳細を見る
Electron scattering rates in AlGaN/GaN QWs for the 1.55-μm inter-subband transition at room temperature are calculated. The inter-subband scattering time, which is dominated by the longitudinal optical (LO) phonon scattering, is as short as about 100 fs. The intra-subband LO-phonon scattering rate, the electron-electron scattering rate, and the ionized impurity scattering rate are greater than those in (In)GaAs QWs. This causes a short dephasing time of about 10 fs, which reduces the peak value of the third-order nonlinear susceptibility but broadens its spectral width. Even if the band nonparabolicity is taken into consideration, ultrafast response of the inter-subband optical nonlinearity in GaN QWs is little affected by the delay in intra-subband energy relaxation caused by non-equilibrium phonons.
- 社団法人応用物理学会の論文
- 1998-04-01
著者
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Suzuki N
Riken (inst. Physical And Chemical Res.) Saitama
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Iizuka Norio
Advanced Discrete Semiconductor Technology Laboratory Corporate Research & Development Center To
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Iizuka Norio
Advanced Semiconductor Devices Research Laboratories Research And Development Center Toshiba Corpora
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SUZUKI Nobuo
Advanced Discrete Semiconductor Technology Laboratory, Toshiba Corporation
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Suzuki Nobuo
Advanced Semiconductor Devices Research Laboratories Research And Development Center Toshiba Corpora
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Suzuki Nobuo
Advanced Discrete Semiconductor Technology Laboratory Toshiba Corporation
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