de Haas-van Alphen Effect of CeSb Under Pressure

概要

論文の詳細を見る
We report a de Haas-van Alphen effect stvtdy of' CeSb in the high-field f'errott'xagnetic (F)and interttaediate-field antiferronaagnetic (AFFI) phases, In the F phase, the frequencies of theelectron strrfaces increase taaonotonically with pressure. On the other hand, the frequency of oneparticular hole strrface increases with presstrr'e, while those of the other hole strrfaces decreaseslightly. The efl'ective II)2188(l)S of all the hole surfaxces increase siraailarly with pressture, while thoseof the electron strrfaces change little. In the AFFI phase, other hole strrfaces than the particularone have qtralitatively different pressure dependence from that in the F phase. The freqtrencychanges both in the F and AFFI phases can be explained T:?y taking the ??nisotrojcic p-f tauixingtaaodel into accottnt. However, it is diflictrlt to trnderstand the changes of the effective masses interms of the f content expected for the p-J' rnixing unodel.
社団法人日本物理学会の論文
1998-11-15