Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-μm Intersubband Transition in AlGaN/GaN Quantum Wells

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概要

• 論文の詳細を見る

• The feasibility of the intersubband transition (ISBT) in Al(Ga)N/GaN quantum wells (QWs) as a device mechanism for ultrafast optical swiches is theoretically investigated. The 1.55-μm ISBT is shown to be feasible because of its large conduction band discontinuity. The intersubband relaxation time at 1.55-μm is estimated to be 80 fs, which is about 30 times shorter than that in InGaAs QWs. The third order nonlinear susceptibility is estimated to be 1.6×10^<-15> m^2・V^<-2> for N=1×10^<18> cm^<-3>. These characteristics suggest that the ISBT in nitride QWs is a promising mechanism for multi-terabit/s optical switches.

• 社団法人応用物理学会の論文
• 1997-08-01

著者

• Iizuka Norio

  Advanced Discrete Semiconductor Technology Laboratory Corporate Research & Development Center To

• Iizuka Norio

  Advanced Semiconductor Devices Research Laboratories Toshiba Corporation

• SUZUKI Nobuo

  Advanced Discrete Semiconductor Technology Laboratory, Toshiba Corporation

• Suzuki Nobuo

  Advanced Semiconductor Devices Research Laboratories Toshiba Corporation

• Suzuki Nobuo

  Advanced Discrete Semiconductor Technology Laboratory Toshiba Corporation

関連論文

• Effects of Strain on Highly-Mismatched AlGaN/GaN Multiple Quantum Wells
• Electron Scattering Rates in AlGaN/GaN Quantum Wells for 1.55-μm Inter-Subband Transition
• Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-μm Intersubband Transition in AlGaN/GaN Quantum Wells
• Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells
• Calculation of Near-Infrared Intersubband Absorption Spectra in GaN/AlN Quantum Wells

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