Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells

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概要

• 論文の詳細を見る

• The effect of the built-in field caused by the piezoelectric effect and the spontaneous polarization inherent in nitride quantum wells on the intersubband transition (ISBT) is studied. Measured intersubband absorption wavelengths of Al_<0.65>Ga_<0.35>N/GaN multiquantum wells suggest the existence of a strong field of about 2 MV/cm. For thick wells, the built-in field in the well reduces the effective well width, which drastically shortens the ISBT wavelength and increases the intersubband relaxation time. For thin wells, the strong field in barriers reduces the effective barrier height, which affects the formation of the second subband. Reduction in the field strength in the barriers is important in achieving a short wavelength ISBT.

• 社団法人応用物理学会の論文
• 1999-04-01

著者

• Iizuka Norio

  Advanced Discrete Semiconductor Technology Laboratory Corporate Research & Development Center To

• Iizuka Norio

  Advanced Semiconductor Devices Research Laboratories Research And Development Center Toshiba Corpora

• SUZUKI Nobuo

  Advanced Discrete Semiconductor Technology Laboratory, Toshiba Corporation

• Suzuki Nobuo

  Advanced Semiconductor Devices Research Laboratories Research And Development Center Toshiba Corpora

• Suzuki Nobuo

  Advanced Discrete Semiconductor Technology Laboratory Toshiba Corporation

関連論文

• Effects of Strain on Highly-Mismatched AlGaN/GaN Multiple Quantum Wells
• Electron Scattering Rates in AlGaN/GaN Quantum Wells for 1.55-μm Inter-Subband Transition
• Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-μm Intersubband Transition in AlGaN/GaN Quantum Wells
• Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells
• Calculation of Near-Infrared Intersubband Absorption Spectra in GaN/AlN Quantum Wells

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