Effects of Strain on Highly-Mismatched AlGaN/GaN Multiple Quantum Wells
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Iizuka Norio
Advanced Discrete Semiconductor Technology Laboratory Corporate Research & Development Center To
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Iizuka Norio
Advanced Discrete Semiconductor Technology Laboratory Toshiba Corporation
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SUZUKI Nobuo
Advanced Discrete Semiconductor Technology Laboratory, Toshiba Corporation
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Suzuki Nobuo
Advanced Discrete Semiconductor Technology Laboratory Toshiba Corporation
関連論文
- Effects of Strain on Highly-Mismatched AlGaN/GaN Multiple Quantum Wells
- Electron Scattering Rates in AlGaN/GaN Quantum Wells for 1.55-μm Inter-Subband Transition
- Feasibility Study on Ultrafast Nonlinear Optical Properties of 1.55-μm Intersubband Transition in AlGaN/GaN Quantum Wells
- Effect of Polarization Field on Intersubband Transition in AlGaN/GaN Quantum Wells
- Calculation of Near-Infrared Intersubband Absorption Spectra in GaN/AlN Quantum Wells