Preparation of CuGaS_2/ZnS Structures on GaAs(100) Substrate by Pulsed Excimer-Laser Deposition
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概要
- 論文の詳細を見る
C-axis-oriented CuGaS_2 layers were prepared on ZnS/GaAs(100) stubstrates by KrF excimer laser deposition. The influence of substrate temperature and laser fluence on layer characteristics was studied. Relatively smooth CuGaS_2 layers with a surface roughness of about 30 nm were obtained under optimized preparation conditions.
- 社団法人応用物理学会の論文
- 1997-07-01
著者
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Uchiki Hisao
Department Of Electrical Engineering Nagaoka University Of Technology
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Yamaguchi Masayoshi
Department Of Electrical Engineering Nagaoka University Of Technology
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