Epitaxial Growth of AgGaS_2 on (100) GaAs by Excimer Laser Deposition
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概要
- 論文の詳細を見る
Epitaxial AgGaS_2 films were grown on (100) GaAs substrates by means of XeCl excimer laser deposition. Mixed powders of Ag_2S and Ga_2S_3 were used as a target. The diffraction lines from the (004) and (008) planes of AgGaS_2 appeared in an X-ray diffraction pattern. Weak, possibly excitonic, band-edge emission and intense broad green emission were observed in photoluminescence spectra upon excitation by the 365 nm line from a Hg-Xe lamp.
- 社団法人応用物理学会の論文
- 1994-07-15
著者
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Hasegawa Isao
Department Of Agricultural And Biological Chemistry College Of Bioresource Sciences Nihon University
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Uchiki Hisao
Department Of Electrical Engineering Nagaoka University Of Technology
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Hasegawa Isao
Department Of Electrical Engineering Nagaoka University Of Technology
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Hirasawa Hiroyuki
Department Of Electrical Engineering Nagaoka University Of Technology
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Hirasawa Hiroyuki
Department Of Clinical And Laboratory Medicine Akita University School Of Medicine
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