Dependence on Annealing Temperature of Properties of Cu2ZnSnS4 Thin Films Prepared by Sol--Gel Sulfurization Method
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概要
- 論文の詳細を見る
Cu2ZnSnS4 (CZTS) thin films were fabricated using a rapid thermal process in 5% $\text{H$_{2}$S}+ \text{N$_{2}$}$ atmosphere from precursors prepared by the sol--gel method. The precursors were preheated at 250 °C for 10 min and then sulfurized at different temperatures from 300 to 600 °C for 10 min. XRD studies showed that the samples sulfurized at 500--600 °C had a CZTS structure. With increasing sulfurization temperature, the chemical composition ratio of sulfur/metal and the grains size of CZTS increased. From the $(\alpha h \nu)^{2}$--$h\nu$ plot, the CZTS films had a band gap of ${\sim}1.5$ eV.
- 2011-01-25
著者
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Maeda Kazuya
Department Of Education School Of Letters Mukogawa Women's University
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Uchiki Hisao
Department Of Electrical Engineering Nagaoka University Of Technology
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Tanaka Kunihiko
Department Of Astrophysics Nagoya University
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Maeda Kazuya
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-machi, Nagaoka, Niigata 940-2188, Japan
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Fukui Yuki
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-machi, Nagaoka, Niigata 940-2188, Japan
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Uchiki Hisao
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-machi, Nagaoka, Niigata 940-2188, Japan
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Tanaka Kunihiko
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-machi, Nagaoka, Niigata 940-2188, Japan
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