Fabrication of Cu2ZnSnS4 Thin-Film Solar Cell Prepared by Pulsed Laser Deposition
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概要
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A thin-film solar cell based on a Cu2ZnSnS4 (CZTS) absorber layer deposited by pulsed laser deposition has been fabricated with an Al:ZnO (n-type) window layer and a CdS buffer layer. Some peaks attributed to (112), (200), (220), and (312) planes of CZTS appeared in an X-ray diffraction pattern of a thin film. The composition of the film was Sn-rich and the band gap energy was approximately 1.5 eV. A CZTS film annealed at 500 °C in an atmosphere of N2 had optical characteristics suitable for use in an absorber layer of a thin-film solar cell and was used for a solar cell. The CZTS thin-film solar cell with an active area of 0.092 cm2 showed an open-circuit voltage of 546 mV, a short-circuit current of 6.78 mA/cm2, a fill factor of 0.48, and a conversion efficiency of 1.74%.
- 2007-09-15
著者
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Uchiki Hisao
Department Of Electrical Engineering Nagaoka University Of Technology
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Tanaka Kunihiko
Department Of Astrophysics Nagoya University
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Moriya Katsuhiko
Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
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Moriya Katsuhiko
Department of Electrical and Electronic Engineering, Tsuruoka National College of Technology, Tsuruoka, Yamagata 997-8511, Japan
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