Characterization of Cu2ZnSnS4 Thin Films Prepared by Photo-Chemical Deposition
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概要
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Cu2ZnSnS4 thin films were prepared by photo-chemical deposition (PCD) from aqueous solution containing CuSO4, ZnSO4, SnSO4 and Na2S2O3. The compositional ratio of the films was dependent little on pH of aqueous solution and the surface of the samples became smooth by use of aqueous filter. A sample annealed at 400°C was a p-type semiconductor and showed photoconductivity. This is the first observation of photo-conductivity from semiconductor films deposited by PCD, to the best of our knowledge.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-15
著者
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Uchiki Hisao
Department Of Electrical Engineering Nagaoka University Of Technology
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Tanaka Kunihiko
Department Of Astrophysics Nagoya University
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Uchiki Hisao
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Moriya Katsuhiko
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan
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Moriya Katsuhiko
Department of Electrical and Electronic Engineering, Tsuruoka National College of Technology, Tsuruoka, Yamagata 997-8511, Japan
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