Preparation of Ce-Doped CaGa2S4 Crystals by Melting Method and Their Optical Properties
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概要
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Transparent Ce-doped CaGa2S4 bulk crystals were synthesized using a self-flux method. These bulks had high transmittance in luminescence region of 450 nm to 600 nm. Dependence of luminescence intensity on excitation power was observed using a pulsed dye laser excitation. Saturation of luminescence intensity was observed for the first time in this material when the excitation power density exceeded 10 MW/cm2. This saturation was assumed to result from excited state absorption (ESA), and analyzed with a 4-level transition model involving ESA.
- 2005-01-15
著者
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Uchiki Hisao
Department Of Electrical Engineering Nagaoka University Of Technology
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Tanaka Kunihiko
Department Of Astrophysics Nagoya University
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Takayama Katsuhiko
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka 940-2188, Japan
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