Etching of Domains and Dislocations in Ferroelectric NaNO_2 Crystals
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概要
- 論文の詳細を見る
Dislocation etch pits can be formed only on the positive end of the polarization in NaNO_2 crystal by ethyl alcohol solution containing a small of amount NaOH. How the concentration of NaOH, NaNO_2, and cation of the salt NaOH affect etching process of dislocations, domains, and {121} twins were studied. The positive end etches faster than the negative end in alcohol containing no OH^- ion, while in the alcohol solution containing OH^- ion the positive end etches slower than the negative end. From the experimental results following conclusions were obtained. (1) The added OH^- ion is strongly adsorbed on the positive end of the polarization because of the spontaneous polarization charge, and inhibits the dissolving ions to leave the kink. (2) The adsorption of OH^- ions converts the limiting process of dissolution from the volume process to the surface process, resulting in the appearance of dislocation pits.
- 社団法人応用物理学会の論文
- 1969-02-05
著者
-
Abe Ryuji
Department Of Applied Physics Faculty Of Engineering Nagoya University
-
Sawada Akikatsu
Department Of Applied Physics Faculty Of Engineering Nagoya University:(present Address)synthetic Cr
-
Abe Ryuji
Department Fo Applied Physics Faculty Of Engineering Nagoya University
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