Electroluminescence in Forward Biased GaSe-SnO_2 Heterojunction

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1974-11-05

著者

• TATSUYAMA Chiei

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University

• Tatsuyama C

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University

• Tatsuyama Chiei

  Department Of Electonics Faculty Of Engineering Toyama University

• MIZUKAMI Hiroshi

  Department of Biological Science, Wayne State University

• ICHIMURA Shoji

  Department of Electronics, Faculty of Engineering, Toyama University

• Ichimura Shoji

  Department Of Electronics Faculty Of Engineering Toyama University

• Mizukami Hiroshi

  Department Of Biological Science Wayne State University

• Mizukami Hiroshi

  Department Of Electronics Faculty Of Engineering Toyama University:(present Address)japan Electron O

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• Electrical and Optical Properties of GaSe
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• Growth Temperature Dependence of SrTiO_3 Thin Films by Molecular Beam Epitaxy
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• Observation of GaSe-SnO_2 Heterostructure by XPS and AES
• XPS and AES Studies on the Oxidation of Layered Semiconductor GaSe
• On the Electroehromism of Evaporated V_2O_5 Films
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• Electrical and Optical Properties of GaSe-SnO_2 Heterojunctions
• Group Theoretical Analysis of Phonon Assisted Optical Transition in GaSe
• Electroluminescence in Forward Biased GaSe-SnO_2 Heterojunction
• XPS Study on the Oxidation of InSe
• Heteroepitaxial Growth and Superstructure of Ge on Si(111)-7×7 and (100)-2×1 Surfaces
• LEED/AES Studies of the Ge on Si(111)7×7 Surface
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