Structural Transformations During Sb Adsorption on Si(111)-In(4x1) Reconstruction

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-06-01

著者

• TATSUYAMA Chiei

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University

• Rao Bommisetty

  Faculty Of Engineering Toyama University

• Tambo T

  Toyama Univ. Toyama

• Tambo Toyokazu

  Faculty Of Engineering Toyama University

• Gruznev Dimitry

  Faculty Of Engineering Toyama University

• Tatsuyama C

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University

• Tatsuyama Chiei

  Faculty Of Engineering Toyama University

関連論文

• Structural Characterization of Si_Ge_ Alloy Layers with Sb/Ge-Mediated Low Temperature-grown Si Buffers
• Short-Period (Si_/Ge_1)_N Superlattice Buffers for Growth of Si_Ge_ Alloy Layers
• Effect of In(4×1)Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111)Substrate
• Stability of Two-Step-Growth Bi_2Sr_2CuO_x Films on Si(001) using SrO Buffer Layer(Superconductors)
• In-situ Annealing of Thin SrO Films Grown on Si(001)-2 × 1 by Molecular Beam Epitaxy
• Electrical and Optical Properties of GaSe
• Some Optical Properties of Layer-Type Semiconductor GaTe
• Raman Study on the High Temperature Transition in V_2O_3
• Growth Temperature Dependence of SrTiO_3 Thin Films by Molecular Beam Epitaxy
• Solid-Phase Epitaxial Growth of SrTiO_3 Thin Films on Si(001) Substrates at Low Temperature
• Development of SnO_2-based Gas Sensors for Detection of Volatile Organic Compounds
• Migration of Conductive Ink using Silver-Cooper Solid Solution Powder
• Electroluminescence in Forward Biased GaSe-SnO_2 Heterojunction
• Structural Transformations During Sb Adsorption on Si(111)-In(4x1) Reconstruction
• In (4×3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si (001) Substrate
• XPS Study on the Chemical Shifts of Crystalline III-VI Layered Compounds
• Structural Transformations During Sb Adsorption on Si(111)–In($4{\times}1$) Reconstruction
• Effect of In($4\times 1$) Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111) Substrate

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