Effect of In($4\times 1$) Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111) Substrate

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We studied the molecular-beam epitaxial growth processes of InSb on Si(111)-($7\times 7$) and Si(111)-In($4\times 1$) [denoted as In($4\times 1$)] surface phases over a temperature range of 170–400°C@. The In($4\times 1$) surface phase strongly influences the growth processes depending on the growth temperature. The In($4\times 1$) reconstruction slightly improves the epitaxial quality of the film at 210°C@. However, at 300°C, films grown on In($4\times 1$) surface phase are highly disordered, whereas direct growth produced good quality films. Results from the two-step growth procedure also indicated a similar modification of the growth behavior by the In($4\times 1$) reconstruction. This temperature-dependent effect is in contrast to the one we reported earlier for InSb growth on the Si(001)-In($4\times 3$) surface phase. We studied the interface formation by depositing 1 monolayer Sb on the In($4\times 1$) surface phase at various deposition temperatures and propose a model for the observed growth behavior.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2000-07-15