Effect of In(4×1)Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111)Substrate
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-07-15
著者
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Rao B
Toyama Univ. Toyama Jpn
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RAO B.V.
Faculty of Engineering, Toyama University
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GRUZNEV Dimitri
Faculty of Engineering, Toyama University
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TAMBO Toyokazu
Faculty of Engineering, Toyama University
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TATSUYAMA Chiei
Faculty of Engineering, Toyama University
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Tambo Toyokazu
Faculty Of Engineering Toyama University
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Gruznev Dimitri
Faculty Of Engineering Toyama University
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Tatsuyama Chiei
Faculty Of Engineering Toyama University
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Rao B.v.
Faculty Of Engineering Toyama University
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Rao B.
Faculty of Engineering, Toyama University
関連論文
- Effect of In(4×1)Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111)Substrate
- Structural Transformations During Sb Adsorption on Si(111)-In(4x1) Reconstruction
- Structural Transformations During Sb Adsorption on Si(111)–In($4{\times}1$) Reconstruction
- Effect of In($4\times 1$) Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111) Substrate