Structural Transformations During Sb Adsorption on Si(111)–In($4{\times}1$) Reconstruction

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概要

• 論文の詳細を見る

• Understanding of initial stages of compound semiconductor growth on Si substrates is important for achieving atomically flat heterointerfaces, which are necessary for the fabrication of many advanced devices. Present report details the formation of InSb($2{\times}2$) reconstruction on the Si(111) substrate by Sb adsorption on Si(111)–In($4{\times}1$) surface phase and illustrates the structural transformations caused by the reordering of excess In. Higher Sb adsorption destroys the InSb phase with the coalescence of most of the In into 3D islands. This coalescence is accompanied by the formation of well-ordered Si(111)–Sb($2{\times}1$) phase between 260 and 350°C. Possible atomistic mechanisms responsible for the structural transformations are detailed.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2001-06-30

著者

• Rao Bommisetty

  Faculty Of Engineering Toyama University

• Tambo Toyokazu

  Faculty Of Engineering Toyama University

• Gruznev Dimitry

  Faculty Of Engineering Toyama University

• Tatsuyama Chiei

  Faculty Of Engineering Toyama University

• Rao Bommisetty

  Faculty of Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555, Japan

関連論文

• Effect of In(4×1)Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111)Substrate
• Structural Transformations During Sb Adsorption on Si(111)-In(4x1) Reconstruction
• In (4×3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si (001) Substrate
• Structural Transformations During Sb Adsorption on Si(111)–In($4{\times}1$) Reconstruction
• Effect of In($4\times 1$) Reconstruction Induced Interface Modification on the Growth Behavior of InSb on Si(111) Substrate

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