In (4×3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si (001) Substrate

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概要

• 論文の詳細を見る

• In the present letter we report the epitaxial growth of 9000-Å-thick InSb on a Si (001) surface via In(4×3) reconstruction by molecular beam epitaxy. The growth was monitored in situ using RHEED, Auger electron spectroscopy, scanning tunneling microscopy and the exsitu characterization was done using X-ray diffraction, atomic force microscopy, and optical microscopy. The heteroepitaxy of InSb on Si (001) surface is achieved despite the presence of a large lattice mismatch (over 19%) by incorporating a 0.5ML In (4×3) reconstruction at the InSb/Si interface. Based on these results a model for the interface formation is developed.

• 社団法人応用物理学会の論文
• 1998-11-01

著者

• TATSUYAMA Chiei

  Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University

• Rao Bommisetty

  Faculty Of Engineering Toyama University

• Tambo T

  Toyama Univ. Toyama

• Tambo Toyokazu

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University

• Tatsuyama C

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University

• Tatsuyama Chiei

  Department Of Electonics Faculty Of Engineering Toyama University

• RAO Bommisetty

  Department of Electrical & Electronic Engineering, Faculty of Engineering, Toyama University

• ATOJI Makoto

  Department of Electrical & Electronic Engineering, Faculty of Engineering, Toyama University

• LI Don

  Department of Electrical & Electronic Engineering, Faculty of Engineering, Toyama University

• OKAMOTO Tetsukazu

  Department of Electrical & Electronic Engineering, Faculty of Engineering, Toyama University

• Li Don

  Department Of Electrical & Electronic Engineering Faculty Of Engineering Toyama University

• Atoji Makoto

  Department Of Electrical & Electronic Engineering Faculty Of Engineering Toyama University

• Okamoto Tetsukazu

  Department Of Electrical & Electronic Engineering Faculty Of Engineering Toyama University

関連論文

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• Growth Temperature Dependence of SrTiO_3 Thin Films by Molecular Beam Epitaxy
• Solid-Phase Epitaxial Growth of SrTiO_3 Thin Films on Si(001) Substrates at Low Temperature
• Development of SnO_2-based Gas Sensors for Detection of Volatile Organic Compounds
• Migration of Conductive Ink using Silver-Cooper Solid Solution Powder
• Observation of GaSe-SnO_2 Heterostructure by XPS and AES
• XPS and AES Studies on the Oxidation of Layered Semiconductor GaSe
• On the Electroehromism of Evaporated V_2O_5 Films
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• Electrical and Optical Properties of GaSe-SnO_2 Heterojunctions
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• Heteroepitaxial Growth and Superstructure of Ge on Si(111)-7×7 and (100)-2×1 Surfaces
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• In (4×3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si (001) Substrate
• XPS Study on the Chemical Shifts of Crystalline III-VI Layered Compounds
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