Electrical and Optical Properties of GaSe-SnO_2 Heterojunctions
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概要
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The capacitance-voltage (C-V) and forward biased current-voltage (I-V) characteristics, electroluminescence (E.L) and photovoltaic effect of GaSe-SnO_2 heterojunction diodes are measured. SnO_2 layer is deposited on the c-plane of GaSe by using the spray method. The C-V and I-V characteristics of these diodes reveal the existence of a high resistivity layer, probably due to the diffusion of Sn into GaSe. The width of this layer is about 2.6 μm. And the current transport mechanism at low voltage is space-charge-limited. The trap density and the energy level of the trap from the valence band estimated by Lampert theory are about 5×10^<13>〜1×10^<14> cm^3 and 0.4〜0.6 eV, respectively. The electroluminescence spectra at 275 K show one emission band due to free exciton recombination.
- 社団法人応用物理学会の論文
- 1976-05-05
著者
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Tatsuyama Chiei
Department Of Electonics Faculty Of Engineering Toyama University
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ICHIMURA Shoji
Department of Electronics, Faculty of Engineering, Toyama University
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Ichimura Shoji
Department Of Electronics Faculty Of Engineering Toyama University
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