XPS Study on the Change of Surface Potential of GaSe and InSe Induced by Ar^+ Sputtering
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概要
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The changes of surface potential, directly induced by Ar ion sputtering, have been studied using X-ray photoelectron spectroscopy for both p-type GaSe and n-type InSe with no dangling bonds on the cleaved surface. Since the sputtering makes the surface metal-rich in these compounds, it is then predicted that the surface potential dramatically changes. The change of work function due to sputtering is obtained by measuring the emission spectrum of slow secondary electrons. It decreases from 5.7 eV to 5.3 eV in GaSe and increases from 4.5 eV to 5.0 eV in InSe. The magnitude of band bending due to sputterung is estimated from the shift of core levels. It is found that the band bends downwards by about 0.2 eV in GaSe and upwards by about 0.6 eV in InSe. These experimental results are explained in terms of the thin metallic layer and the interface states on the sputtered surface.
- 社団法人応用物理学会の論文
- 1984-04-20
著者
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Tambo Toyokazu
Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University
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Tambo Toyokazu
Department Of Electronics Faculty Of Engineering Toyama University
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Tatsuyama Chiei
Department Of Electonics Faculty Of Engineering Toyama University
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