On the Electroehromism of Evaporated V_2O_5 Films
スポンサーリンク
概要
- 論文の詳細を見る
The electrochromism of amorphous V_2O_5 thin films prepared by the vacuum evaporation of V_2O_5 powder was studied through optical absorption, XPS and SIMS measurements. The films were colored and bleached with the aid of an electrolyte consisting of lithium perchlorate (LiCLO_4・3H_2O) in propylene carbonate (CH_3CHOCOOCH_2). The as-grown films were yellow, like V_2O_5 powder, while the colored films were greenish-gray, like VO_2 powder. The XPS spectra of the O_<ls> and V_<2p3/2> core levels of the as-grown films matched those of V_2O_5 powder, while those of the colored films were similar to those of VO_2 powder. SIMS measurement revealed that Li^+ ions are introduced into the films by coloration and expelled by bleaching. From these results, it is concluded that the coloration of a-V_2O_5 films is due to a change in the molecular state from V_2O_5 to VO_2. This change is caused by the double injection of electrons and Li^+ ions into the films.
- 社団法人応用物理学会の論文
- 1985-08-20
著者
-
Fujita Yoshitaka
Department Of Electronics Faculty Of Engineering Toyama University
-
Fujita Yoshitaka
Department Of Electonics Faculty Of Engineering Toyama University
-
Tatsuyama Chiei
Department Of Electonics Faculty Of Engineering Toyama University
-
MIYAZAKI Katsuhiro
Department of Electronics, Faculty of Engineering, Toyama University
-
Miyazaki Katsuhiro
Department Of Electronics Faculty Of Engineering Toyama University
関連論文
- Cluster-Excitations in ^6Li and ^7Li
- Cluster-Excitations in ^6Li and ^7Li
- Structural Characterization of Si_Ge_ Alloy Layers with Sb/Ge-Mediated Low Temperature-grown Si Buffers
- Short-Period (Si_/Ge_1)_N Superlattice Buffers for Growth of Si_Ge_ Alloy Layers
- Structure of Higher T_z Nuclei Deduced by the Higher T States(International Workshop on Nuclear Structure-New Pictures in the Extended Isospin Space(NS07)-)
- Stability of Two-Step-Growth Bi_2Sr_2CuO_x Films on Si(001) using SrO Buffer Layer(Superconductors)
- In-situ Annealing of Thin SrO Films Grown on Si(001)-2 × 1 by Molecular Beam Epitaxy
- Electrical and Optical Properties of GaSe
- Some Optical Properties of Layer-Type Semiconductor GaTe
- Raman Study on the High Temperature Transition in V_2O_3
- Growth Temperature Dependence of SrTiO_3 Thin Films by Molecular Beam Epitaxy
- Observation of GaSe-SnO_2 Heterostructure by XPS and AES
- XPS and AES Studies on the Oxidation of Layered Semiconductor GaSe
- On the Electroehromism of Evaporated V_2O_5 Films
- Molecular Beam Epitaxy of SrTiO_3 Films on Si(100)-2 × 1 with SrO Buffer Layer
- Electrical and Optical Properties of GaSe-SnO_2 Heterojunctions
- Group Theoretical Analysis of Phonon Assisted Optical Transition in GaSe
- Electroluminescence in Forward Biased GaSe-SnO_2 Heterojunction
- XPS Study on the Oxidation of InSe
- Heteroepitaxial Growth and Superstructure of Ge on Si(111)-7×7 and (100)-2×1 Surfaces
- LEED/AES Studies of the Ge on Si(111)7×7 Surface
- In (4×3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si (001) Substrate
- XPS Study on the Chemical Shifts of Crystalline III-VI Layered Compounds
- XPS Study on the Change of Surface Potential of GaSe and InSe Induced by Ar^+ Sputtering
- Solid-Phase Epitaxial Growth of SrTiO3 Thin Films on Si(001) Substrates at Low Temperature
- Molecular Beam Epitaxy of SrTiO3 Films on Si(100)-2×1 with SrO Buffer Layer
- Electrical Properties of Heteroepitaxial Ge Films on Si(100)–$2\times 1$ Surfaces