Observation of GaSe-SnO_2 Heterostructure by XPS and AES
スポンサーリンク
概要
- 論文の詳細を見る
The depth profile of the elemental composition of the GaSe-SnO_2 heterostructure has been studied by XPS and AES. The SnO_2 layer was prepared by spraying a solution of SnCl_4 and SbCl_3 in ethyl alcohol on to the the cleaved surface of GaSe heated to 〜400℃ in air. After the solution had been sprayed on for about 5 secs., an SnO_2 layer of thickness 〜460Å formed, and a Ga_2O_3 layer of thickness 〜120Å formed under the SnO_2 layer. The Ga_2O_3 layer is a likely origin of the high-resistivity layer observed in the GaSe-SnO_2 heterostructure.
- 社団法人応用物理学会の論文
- 1982-01-05
著者
-
Tatsuyama Chiei
富山大学工学部
-
Tatsuyama Chiei
Department Of Electonics Faculty Of Engineering Toyama University
-
ICHIMURA Shoji
富山大学工学部
-
ICHIMURA Shoji
Department of Electronics, Faculty of Engineering, Toyama University
-
IWAKURO Hiroaki
Department of Electronics, Faculty of Engineering, Toyama University
-
Ichimura Shoji
Department Of Electronics Faculty Of Engineering Toyama University
関連論文
- Structural Characterization of Si_Ge_ Alloy Layers with Sb/Ge-Mediated Low Temperature-grown Si Buffers
- Short-Period (Si_/Ge_1)_N Superlattice Buffers for Growth of Si_Ge_ Alloy Layers
- Stability of Two-Step-Growth Bi_2Sr_2CuO_x Films on Si(001) using SrO Buffer Layer(Superconductors)
- In-situ Annealing of Thin SrO Films Grown on Si(001)-2 × 1 by Molecular Beam Epitaxy
- Electrical and Optical Properties of GaSe
- Some Optical Properties of Layer-Type Semiconductor GaTe
- Raman Study on the High Temperature Transition in V_2O_3
- Growth Temperature Dependence of SrTiO_3 Thin Films by Molecular Beam Epitaxy
- XPS及びAESによる層状半導体GaSeの酸化過程の研究
- Observation of GaSe-SnO_2 Heterostructure by XPS and AES
- XPS and AES Studies on the Oxidation of Layered Semiconductor GaSe
- On the Electroehromism of Evaporated V_2O_5 Films
- Molecular Beam Epitaxy of SrTiO_3 Films on Si(100)-2 × 1 with SrO Buffer Layer
- Electrical and Optical Properties of GaSe-SnO_2 Heterojunctions
- Group Theoretical Analysis of Phonon Assisted Optical Transition in GaSe
- Electroluminescence in Forward Biased GaSe-SnO_2 Heterojunction
- XPS Study on the Oxidation of InSe
- Heteroepitaxial Growth and Superstructure of Ge on Si(111)-7×7 and (100)-2×1 Surfaces
- LEED/AES Studies of the Ge on Si(111)7×7 Surface
- Molecule Adsorbed on Metal Surface : Role of Electron-Hole Excitation in Metal
- Theory of Surface Excitons in Molecular Crystals
- Davydov Splitting of Surface Excitons
- In (4×3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si (001) Substrate
- XPS Study on the Chemical Shifts of Crystalline III-VI Layered Compounds
- XPS Study on the Change of Surface Potential of GaSe and InSe Induced by Ar^+ Sputtering
- Solid-Phase Epitaxial Growth of SrTiO3 Thin Films on Si(001) Substrates at Low Temperature
- Molecular Beam Epitaxy of SrTiO3 Films on Si(100)-2×1 with SrO Buffer Layer
- Electrical Properties of Heteroepitaxial Ge Films on Si(100)–$2\times 1$ Surfaces