Heteroepitaxial Growth and Superstructure of Ge on Si(111)-7×7 and (100)-2×1 Surfaces

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概要

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• The initial stage of the heteroepitaxy, and the superstructure of Ge on Si surfaces, have been investigated by LEED and AES. Germanium was evaporated on to a clean Si(111) -7×7 surface and also on to an Si(100)-2×1 surface. The layer-by-layer growth of Ge films on the Si surfaces was confirmed from the decrease in intensity of the Si(LVV)-AES signal with increase in Ge coverage. It was found that the (7×7) superstructure of the Si (111) surface is replaced by a (5×5) superstructure at about 2 monolayers coverage of Ge. The phase diagram of the superstructure of Ge on the Si(111) system was constructed for Ge coverage in monolayers evaporated at room temperature, versus annealing temperature. A similar study was also extended to Ge on an Si(100)-2×1 surface, where the original LEED pattern is not strongly distrubed at about 1-2 monolayers of Ge.

• 社団法人応用物理学会の論文
• 1983-10-20

著者

• Tatsuyama Chiei

  Department Of Electonics Faculty Of Engineering Toyama University

• Ueba Hiromu

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University

• SHOUJI Katsuyuki

  Department of Electronics, Faculty of Engineering, Toyama University

• HYODO Masahito

  Department of Electronics, Faculty of Engineering, Toyama University

• Hyodo Masahito

  Department Of Electronics Faculty Of Engineering Toyama University

• Shouji Katsuyuki

  Department Of Electronics Faculty Of Engineering Toyama University

関連論文

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• Short-Period (Si_/Ge_1)_N Superlattice Buffers for Growth of Si_Ge_ Alloy Layers
• Stability of Two-Step-Growth Bi_2Sr_2CuO_x Films on Si(001) using SrO Buffer Layer(Superconductors)
• In-situ Annealing of Thin SrO Films Grown on Si(001)-2 × 1 by Molecular Beam Epitaxy
• Electrical and Optical Properties of GaSe
• Some Optical Properties of Layer-Type Semiconductor GaTe
• Raman Study on the High Temperature Transition in V_2O_3
• Growth Temperature Dependence of SrTiO_3 Thin Films by Molecular Beam Epitaxy
• Observation of GaSe-SnO_2 Heterostructure by XPS and AES
• XPS and AES Studies on the Oxidation of Layered Semiconductor GaSe
• On the Electroehromism of Evaporated V_2O_5 Films
• Molecular Beam Epitaxy of SrTiO_3 Films on Si(100)-2 × 1 with SrO Buffer Layer
• Electrical and Optical Properties of GaSe-SnO_2 Heterojunctions
• Group Theoretical Analysis of Phonon Assisted Optical Transition in GaSe
• Electroluminescence in Forward Biased GaSe-SnO_2 Heterojunction
• XPS Study on the Oxidation of InSe
• Theory of Core Hole Decay Dynamics of Adsorbate on Metal Surfaces
• Heteroepitaxial Growth and Superstructure of Ge on Si(111)-7×7 and (100)-2×1 Surfaces
• LEED/AES Studies of the Ge on Si(111)7×7 Surface
• Molecule Adsorbed on Metal Surface : Role of Electron-Hole Excitation in Metal
• Theory of Surface Excitons in Molecular Crystals
• Davydov Splitting of Surface Excitons
• In (4×3) Reconstruction Mediated Heteroepitaxial Growth of InSb on Si (001) Substrate
• XPS Study on the Chemical Shifts of Crystalline III-VI Layered Compounds
• XPS Study on the Change of Surface Potential of GaSe and InSe Induced by Ar^+ Sputtering
• Solid-Phase Epitaxial Growth of SrTiO3 Thin Films on Si(001) Substrates at Low Temperature
• Molecular Beam Epitaxy of SrTiO3 Films on Si(100)-2×1 with SrO Buffer Layer
• Electrical Properties of Heteroepitaxial Ge Films on Si(100)–$2\times 1$ Surfaces

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