LEED/AES Studies of the Ge on Si(111)7×7 Surface
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概要
- 論文の詳細を見る
Germanium was evaporated on the clean Si(111)7×7 surface at room temperature. With increase in Ge coverage θ, the intensity of the Si(LVV) AES signal decreased in accordance with a 2-dimensional growth mode up to a few monolayers, and the LEED pattern gradually changed from the (7×7) structure to a diffused (1×1) one at θ<2 monolayers and to an nonstructural one at θ>2. The LEED pattern and the AES intensity drastically changed by annealing. The Si(111)7×7 surface covered by 2 monolayers of Ge shows a (5×5) structure by annealing at temperature between 380 and 720℃.
- 社団法人応用物理学会の論文
- 1983-03-20
著者
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Tatsuyama Chiei
Department Of Electonics Faculty Of Engineering Toyama University
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Ueba Hiromu
Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University
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HYODO Masahito
Department of Electronics, Faculty of Engineering, Toyama University
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SHOJI Katsuyuki
Department of Electronics, Faculty of Engineering, Toyama University
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Hyodo Masahito
Department Of Electronics Faculty Of Engineering Toyama University
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Shouji Katsuyuki
Department Of Electronics Faculty Of Engineering Toyama University
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