Electrical Properties of Heteroepitaxial Ge Films on Si(100)–$2\times 1$ Surfaces

概要

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Electrical properties of epitaxial Ge films grown on Si(100)–$2\times 1$ surfaces have been studied by Hall measurement, and their structural properties have been characterized by analyses of LEED patterns, X-ray diffraction, Raman scattering spectra and cross-sectional TEM images. It has been found that the growth layers exhibit $p$-type conduction, possibly due to the Ge vacancies and the temperature dependences of carrier concentration $n(T)$ and hole mobility $\mu$($T$) depend on growth conditions, such as substrate temperature, film thickness and annealing treatment. For thick Ge films grown on coalesced Ge islands, $\mu$($T$) is governed by long-range optical phonon scattering, indicating the growth of high structural quality in the Ge films. For relatively thin films composed of Ge islands, on the other hand, $\mu$($T$) obeys short-range acoustic phonon scattering due to crystalline imperfections, such as dislocations or defects. Similar experiments have also been performed for thin Ge films grown on predeposited Ge buffer layers on Si substrates.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1989-03-20