Solid-Phase Epitaxial Growth of SrTiO3 Thin Films on Si(001) Substrates at Low Temperature
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概要
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The solid-phase epitaxial growth of perovskite-type SrTiO3 films on Sr-deposited Si(001) substrates has been studied. Sr deposition on the Si oxide substrate reduces the thickness of the oxide layer and leads to the formation of a Si(001)-Sr($2\times 1$) reconstructed surface. Reflection high-energy electron diffraction (RHEED) and X-ray diffraction (XRD) analyses, and atomic force microscopy (AFM) show that the SrTiO3 film grown at 80°C is amorphous and after postgrowth annealing at an elevated temperature the SrTiO3 film changes to a crystalline phase and has a smooth surface.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-11-15
著者
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Bhuiyan Md.
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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Tambo Toyokazu
Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University
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Tatsuyama Chiei
Department Of Electonics Faculty Of Engineering Toyama University
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Kimura Hiroaki
Department Of Electrical And Electronic Engineering Faculty Of Engineering Toyama University
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Bhuiyan Md.
Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555, Japan
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Tambo Toyokazu
Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555, Japan
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Tatsuyama Chiei
Department of Electrical and Electronic Engineering, Faculty of Engineering, Toyama University, 3190 Gofuku, Toyama 930-8555, Japan
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