Two-Phase Boosted Voltage Generator for Low-Voltage Giga-Bit DRAMs

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概要

• 論文の詳細を見る

• A two-phase boosted voltage (VPP) generator circuit was proposed for use in giga-bit DRAMs. It reduced the maximum gate oxide voltage of pass transistor and the lower limit of supply voltage to VPP and V_<TN> respectively while those for the conventional charge pump circuit are VPP+VDD and 1.5V_<TN> respectively. Also the pumping current was increased in the new circuit.

• 社団法人電子情報通信学会の論文
• 2000-02-25

著者

• Lee Sang-hoon

  Vlsi Systems Laboratory Pohang University Of Science And Technology (postech)

• PARK Hong-June

  VLSI Systems Laboratory, Pohang University of Science and Technology (POSTECH)

• Choi J‐s

  Hyundai Electronics Ind. Co. Ltd. Icheon Kor

• Chung J‐y

  Hynix Semiconductor Inc. Ichon‐si Kor

• Choi Joo-sun

  Hyundai Electronics Industries Co. Ltd.

• Kim Y‐h

  Changwon National Univ. Changwon‐si Kor

• Nam Jong-ki

  Vlsi Systems Laboratory Pohang University Of Science And Technology (postech)

• Park H‐j

  Pohang Univ. Sci. And Technol. Kyungbuk Kor

• Park Hong-june

  Vlsi Systems Laboratory Pohang University Of Science And Technology (postech)

• Kim Young-hee

  Vlsi Design Laboratory Changwon National University

• Kim Young-hee

  Changwon National University

• Park H‐j

  Pohang Univ. Sci. And Technol. (postech) Kor

• PARK Choon-Sung

  Hyundai Electronics Industries Co., Ltd.

• AHN Seung-Han

  Hyundai Electronics Industries Co., Ltd.

• CHUNG Jin-Yong

  Hyundai Electronics Industries Co., Ltd.

• Park Hong-june

  Department Of Electrical Engineering Pohang University Of Science And Technology

• Ahn Seung-han

  Hyundai Electronics Industries Co. Ltd.

• Park Choon-sung

  Hyundai Electronics Industries Co. Ltd.

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