A Temperature-Insensitive Current Controlled CMOS Output Driver
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概要
- 論文の詳細を見る
A current controlled CMOS output driver was designed by using a temperature-insensitive reference current generator. It eliminates the need for overdesign of the driver transistor size to meet the delay specification at high temperature.Comparison with the conventional CMOS output driver with the same transistor size showed that the ground bounce noise was reduced by 2.5 times and the delay time was increased by 1.4 times, at 25゜C for 50 pF load. The temperature variations of the DC pull-up and pull-down currents of the new output driver were 4% within the temperature range from -15゜C to 125゜C compared to the variations of 40 and 60% for pull-up and pull-down respectively for the conventional output driver. The temperature insensitivity of the reference current generator was achieved by multiplying two current components, one which is proportional to mobility and the other which is inversely proportional to mobility, by using a CMOS square root circuit. The temperature variation of the DC output current of the reference current generator alone was 0.77% within the entire temperature range from -15O C to 125O C.
- 社団法人電子情報通信学会の論文
- 1996-12-25
著者
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Park H‐j
Pohang Univ. Sci. And Technol. Kyungbuk Kor
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Park Hong-june
Vlsi Systems Laboratory Pohang University Of Science And Technology (postech)
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Lee Ching-her
The Department Of Electronic Engineering National Changhua University Of Education
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Sim J‐y
Samsung Electronics Kor
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Park H‐j
Pohang Univ. Sci. And Technol. (postech) Kor
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Park Hong-june
Department Of Electrical Engineering Pohang University Of Science And Technology
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Lee C‐h
The Department Of Electronic Engineering National Changhua University Of Education
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LEE Cheol-Hee
the VLSI systems Laboratory, Pohang University of Science and Technology (POSTECH)
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SIM Jae-Yoon
the VLSI systems Laboratory, Pohang University of Science and Technology (POSTECH)
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PARK Hong-June
the VLSI systems Laboratory, Pohang University of Science and Technology (POSTECH)
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