A Paired MOS Charge Pump for Low Voltage Operation(Electronic Circuits)
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概要
- 論文の詳細を見る
We present a new multi-stage charge pump that is suitable for low-voltage operation, and in particular for low voltage flash memory. Compare to the Dickson charge pump and previously reported modified Dickson charge pumps, the pro- posed charge pump offers the improved pumping voltage gains. The proposed charge pump is composed of a pair of pumps and utilizes the internal boosted voltages of one side of the paired pumps as the charge transferring voltages to the other side. The simulated and measured results indicate that the proposed pump is highly efficient in overcoming both the pumping gain decrease and the current driving capability degradation caused by the threshold voltage of the charge-transfer gate.
- 社団法人電子情報通信学会の論文
- 2003-05-01
著者
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Cho S‐i
Dram Design Samsung Electronics Company
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Kim Y‐h
Changwon National Univ. Changwon‐si Kor
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Kim Young-hee
Vlsi Design Laboratory Changwon National University
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Kim Young-hee
Changwon National University
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Cho Seong-ik
Hynix Semiconductor
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Cho Soo-in
Product Development Center Memory Division Samsung Electronics
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Park Mu-hun
Changwon National University
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Choi Jin-hyeok
Hynix Semiconductor Inc.:institute Of Industrial Science The University Of Tokyo
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