Cho Seong-ik | Hynix Semiconductor
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概要
関連著者
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Cho S‐i
Dram Design Samsung Electronics Company
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Cho Seong-ik
Hynix Semiconductor
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Cho Soo-in
Product Development Center Memory Division Samsung Electronics
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Lee S‐h
Electronics And Telecommunications Res. Inst. (etri) Daejeon Kor
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Choi Yun-ho
Product Development Center Memory Division Samsung Electronics
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Kim Y‐h
Changwon National Univ. Changwon‐si Kor
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Park H‐j
Pohang Univ. Sci. And Technol. Kyungbuk Kor
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Park Hong-june
Vlsi Systems Laboratory Pohang University Of Science And Technology (postech)
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Kim Young-hee
Vlsi Design Laboratory Changwon National University
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Kim Young-hee
Changwon National University
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Lee Seung-hoon
Product Development Center Memory Division Samsung Electronics
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Lee Seung-hoon
Department Of Electronics Engineering Sogang University
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Park H‐j
Pohang Univ. Sci. And Technol. (postech) Kor
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Haq Ejaz
Product Development Center, Memory Division, Samsung Electronics
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Cho Soo-in
Dram Design Samsung Electronics Company
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Park Hong-june
Department Of Electrical Engineering Pohang University Of Science And Technology
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SOHN Young-Soo
Department of Electrical Engineering, Pohang University of Science and Technology
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Haq Ejaz
Product Development Center Memory Division Samsung Electronics
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Park Mu-hun
Changwon National University
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Chin Daeje
Product Development Center Memory Division Samsung Electronics
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Sohn Young-soo
Department Of Electrical Engineering Pohang University Of Science And Technology
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Sohn Young-soo
Physics Department Hanyang University
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Lee Seung-hee
Department Of Physics Korea University
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Choi Y
Samsung Electronics Co. Ltd. Gyeongii‐do Kor
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Park Hong-june
Pohang University Of Science And Technology (postech)
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Park Jin-seok
Ic Laboratory Pohang University Of Science And Technology(postech)
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Choi Yunho
Product Development Center, Memory Division, Samsung Electronics
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Kim Myungho
Product Development Center, Memory Division, Samsung Electronics
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Jang Hyunsoon
Product Development Center, Memory Division, Samsung Electronics
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Kim Taejin
Product Development Center, Memory Division, Samsung Electronics
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Lee Ho-cheol
Product Development Center, Memory Division, Samsung Electronics
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Park Churoo
Product Development Center, Memory Division, Samsung Electronics
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Lee Siyeol
Product Development Center, Memory Division, Samsung Electronics
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Kim Cheol-soo
Product Development Center, Memory Division, Samsung Electronics
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Cho Sooin
Product Development Center, Memory Division, Samsung Electronics
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Karp Joel
Product Development Center, Memory Division, Samsung Electronics
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Chin Daeje
Product Development Center, Memory Division, Samsung Electronics
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Yoo Seung-Moon
Samsung Electronics Company, Ltd.
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Haq Ejaz
Samsung Electronics Company, Ltd.
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Lee Seung-Hoon
Samsung Electronics Company, Ltd.
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Choi Yun-Ho
Samsung Electronics Company, Ltd.
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Cho Soo-In
Samsung Electronics Company, Ltd.
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Kang Nam-Soo
Samsung Electronics Company, Ltd.
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Chin Daeje
Samsung Electronics Company, Ltd.
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BAE Seung-Jun
Department of Electrical Engineering, Pohang University of Science and Technology
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PARK Won-Ki
IC Laboratory, Pohang University of Science and Technology(POSTECH)
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SOHN Young-Soo
IC Laboratory, Pohang University of Science and Technology(POSTECH)
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PARK Hong-June
IC Laboratory, Pohang University of Science and Technology(POSTECH)
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Yoo Seung-moon
Samsung Electronics Company Ltd.
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Kim C‐s
Korea Telecom Taejon Kor
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Bae Seung-jun
Department Of Electrical Engineering Pohang University Of Science And Technology
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Heo Jin-seok
Changwon National University
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Park Won-ki
Ic Laboratory Pohang University Of Science And Technology(postech)
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Kang Nam-soo
Samsung Electronics Company Ltd.
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Choi Jin-hyeok
Hynix Semiconductor Inc.:institute Of Industrial Science The University Of Tokyo
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Lee S
Samsung Electronics Co. Ltd. Gyungki‐do Kor
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Karp Joel
Product Development Center Memory Division Samsung Electronics
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Kim T
Chonnnan Natinal Univ. Gwangju Kor
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Kim M
Chungnam Natinal Univ. Daejeon Kor
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Park Churoo
Product Development Center Memory Division Samsung Electronics
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Lee Ho-cheol
Product Development Center Memory Division Samsung Electronics
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Jang Hyunsoon
Product Development Center Memory Division Samsung Electronics
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PARK Hong-June
IC Lab., Department of Electronic Engineering, Pohang University of Science and Technology (POSTECH)
著作論文
- 16-Mb Synchronous DRAM with 125-Mbyte/s Data Rate (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
- Variable V_<CC> Design Techniques for Battery-Operated DRAM's (Special Section on the 1992 VLSI Circuits Symposium)
- A Decision Feedback Equalizing Receiver for the SSTL SDRAM Interface with Clock-Data Skew Compensation(Integrated Electronics)
- An Analytic Time Jitter Equation of NRZ Signals in Uniformly Loaded PCB Transmission Lines
- CMOS Sense-Amplifier Type Flip-Flop Having Improved Setup/Hold Margin(Integrated Electronics)
- A Paired MOS Charge Pump for Low Voltage Operation(Electronic Circuits)