Variable V_<CC> Design Techniques for Battery-Operated DRAM's (Special Section on the 1992 VLSI Circuits Symposium)

概要

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Wide-voltage-range DRAM's with extended data retention are desirable for battery-operated or portable computers and consumer devices. This paper describes the techniques required to obtain wide operation, functionality, and performance of standard DRAM's from 1.8 V (2 NiCd or Alkaline batteries) to 3.6 V (upper end of LVTTL standard). Specific techniques shown are: 1) a low-power and low-voltage reference generator for detecting V_<CC> level; 2) compensation of dc generators, V_<BB> and V_<PP>, for obtaining high speed at reduced voltages; 3) a static word-line driver and latch-isolation sense amplifier for reducing operating current; and 4) a programmable V_<CC> variable selfrefresh scheme for obtaining maximum data retention time over a full operating range. A sub-50-ns access time is obtained for a M DRAM (2M×8) by simulation.
社団法人電子情報通信学会の論文
1993-05-25