Lee Seung-hoon | Product Development Center Memory Division Samsung Electronics

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著作論文

16-Mb Synchronous DRAM with 125-Mbyte/s Data Rate (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
Variable V_<CC> Design Techniques for Battery-Operated DRAM's (Special Section on the 1992 VLSI Circuits Symposium)
A Temperature and Supply-Voltage Insensitive CMOS Current Reference

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