高周波マイクロ磁気デバイス用Mn-Ir/Fe-Si交換結合膜の作製と特性評価(ソフト磁性材料)

概要

論文の詳細を見る
To develop micromagnetic devices for microwave applipations, it is necessary to develop magnetic films with a ferromagnetic resonance (FMR) frequency higher than 1 GHz. For this purpose, it is essential that such films should have both high saturation magnetization and large magnetic anisotropy. In the present study, an exchange-coupled multilayer film, consisting of Fe_<89>Si_<11>(at.%) with a saturation magnetization of 19 kG and Mn_<80>Ir_<20>(at.%), was fabricated and characterized. From the experimental results, the Mn-Ir/Fe-Si exchange energy J_<ex> was estimated to be about 0.1 erg/cm2. The [Mn-Ir (10 nm)/Fe-Si (7.2 nm)]_<21>/Mn-Ir (10 nm)/Fe-Si (3.6 nm) multilayer film exhibited FMR at around 6 GHz. In addition, |a' was estimated 40-80, and μ" was nearly equal to zero at low frequencies (f< 4.5 GHz). The exchange bias magnetic field was decreased by thermal process. If the decrease of the FMR frequency due to thermal process is allowed by 10 % of as deposited film, the maximum process temperature must be lowered by 250 ℃.
社団法人日本磁気学会の論文
2005-02-01