Low Temperature Dielectric Dispersion in Sn_2P_2S_6

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概要

• 論文の詳細を見る

• The dielectric dispersion in single crystals of stannotms thiohypodiphosphate, SIl2P2S6, whichshows ferroelectricity at room temperature, was raaeasvrred in the frequency range between 100 Hzand 10 MHz below roozn ternperattrre. We found that the non-Debye type dielectric dispersionappears below TOO K. Frozn the dielectric dispersion, we deterunined the activation energy andthe atteunpt frequency by asstmrning the Arrhenius relation. The nature of' the orientationaldynamics in the dipole system of SI12P2S6 was discttssed.

• 社団法人日本物理学会の論文
• 1998-02-15

著者

• ISHIBASHI Yoshihiro

  Department of Applied Physics, School of Engineering, Nagoya University

• IWATA Makoto

  Department of Engineering Physics, Electronics and Mechanics, Graduate School of Engineering, Nagoya

• Yano Shinichi

  Department Of Synthetic Chemistry Gifu University

• Yano Shinichi

  Department Of Chemistry Faculty Of Engineering Gifu University

• MORIYA Keiichi

  Department of Chemistry, Faculty of Engineering, Gifu University

• Iwata Makoto

  Department Of Applied Physics School Of Engineering Nagoya University

• Moriya Keiichi

  Department Of Chemistry Faculty Of Engineering Gifu University

• Miyashita A

  School Of Pharmaceutical Sciences University Of Shizuoka

• Miyashita Akira

  Department of Fixed Prosthodontics, School of Dental Medicine, Tsurumi University

• Miyashita A

  Department Of Applied Chemistry Faculty Of Engineering Saitama University

• Miyashita Akira

  Department Of Applied Physics School Of Engineering Nagoya University

• Ishibashi Yoshihiro

  Department Of Applied Physics Graduate School Of Engineering Nagoya University

• Miyashita Akira

  Department Of Applied Chemistry Faculty Of Engineering Saitama University

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