Hierarchical Domain Structures in Relaxor 24Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub>--46Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>--30PbTiO<sub>3</sub> near a Morphotropic Phase Boundary Composition Grown by Bridgman Method
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概要
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The domain structures of the lead-based relaxor ferroelectric solid solution single crystal, 24Pb(In<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub> (PIN)--46Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> (PMN)--30PbTiO<sub>3</sub> (PT), near a morphotropic phase boundary (MPB) composition grown by the Bridgeman method were studied by polarized light microscopy (PLM), piezoresponse force microscopy (PFM) and scanning electron microscopy (SEM). The change in domain structures with poling from rhombohedral spindlelike domains of 3--5 μm width to orthorhombic domains of ${\sim}20$ μm width with rectangular cells with a size of 3--5 μm, characterized with an antiferroelectic double hysteresis loop in the electric field-induced strain behavior, was found. Such domain structures were microscopically identified from SEM images as small circular tetragonal defects, planar monoclinic defects such as edge and screw dislocations with Burgers vector b along $\langle 110\rangle_{\text{cub}}$ and/or $\langle 100\rangle_{\text{cub}}$ directions and their agglomerate rectangular orthorhombic defects, also characterized by PFM. Hierarchical domain structures are discussed from the viewpoints of domain structures due to defects such as edge and screw dislocations originating in the chemical order region (COR) and the piezoelectric responses and dielectric properties.
- 2011-09-25
著者
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OHWA Hidehiro
Electrical and Electronic Engineering Department, Gifu University
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Iwata Makoto
Department Of Applied Physics School Of Engineering Nagoya University
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Ishibashi Yoshihiro
Department Of Applied Physics Graduate School Of Engineering Nagoya University
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Terauchi Hikaru
Advanced Research Center Of Science And School Of Science Kwansei-gakuin University
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Yasuda Naohiko
Electric and Information Department, Gifu University, Gifu 501-1193, Japan
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Yamashita Yohachi
Toshiba Corporate R&D Center, Toshiba Corporation, Kawasaki 212-8582, Japan
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Terauchi Hikaru
Advanced Research Center of Science, School of Science, Kwansei Gakuin University, Sanda, Hyogo 669-1337, Japan
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Fujita Kazuhiko
Electronic and Control Engineering Department, Gifu National College of Technology, Gifu 501-0495, Japan
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Fuwa Tomohiro
Electrical and Electronic Engineering Department, Gifu University, Gifu 501-1193, Japan
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Tachi Yoshihito
JFE Mineral Co., Ltd., Chiba 260-0826, Japan
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Ishibashi Yoshihiro
Department of Physics, School of Science, Kyushu University, Fukuoka 812-8581, Japan
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Ohwa Hidehiro
Electric and Information Department, Gifu University, Gifu 501-1193, Japan
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