Electrical Resistivity of Gd (Al_<1-x>Cu_x)_2
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概要
- 論文の詳細を見る
Electrical resistivity p of the intermetallic compounds Gd(Al. ..Cu.). in the range ofx having the C15 crystal structure was measured from room temperature to liquid Hetemperature. The resistivity contribution p-.. due to disordered tnagnetic moments ofGd above the ferromagnetic Curie temperature T. was found to depend very much onx. This fact seems to give a strong evidence that the exchange interaction J betweenGd(4f)' electrons and conduction electrons is divided into the exchange interactions J,between Gd(4f)' electrons and the conduction electt'on components having differentorbital angular momentum i. Also component density of states of' conduction electronsis inferred to be likely varying in the series of the present samples.
- 社団法人日本物理学会の論文
- 1977-11-15
著者
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SAKURAI Junji
Faculty of Science,Hiroshima University
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KOMURA Yukitomo
Faculty of Science, Hiroshima University
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Komura Yukitomo
Faculty Of Science Hiroshima University
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Sakurai Junji
Faculity Of Science Kyoto University
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Sakurai Junji
Faculty Of Science Hiroshima University
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ISHIMASA Tsutomu
Faculty of Science,Hiroshima University
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Ishimasa Tsutomu
Faculty Of Science Hiroshima University
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