対向ターゲット型スパッタシステムを用いたGeSbTe薄膜に関する研究(第2報) : 成膜レートならびに膜厚分布について

概要

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We studied GeSbTe films produced by Facing Targets Sputtering: FTS system. First, we investigated the dependence of the film deposition rate on the applied electric power density. Next, the relation between the distance from the targets to the substrate and the deposition rate of films was examined. It was found that the FTS system was equipped with a good control. The film thickness was measured after an evaporation by the high magnification talystep. When the substrate temperature during deposition was controlled at ambient temperature, it was found that the amount of scatter in the film thickness was ±20% for a 60×60mm area, ±10% for a 40×40mm area and less than ±5% for a 20×20mm area. When it was controlled at 140℃, it was shown that the value of scatter in the film thickness was ±10% for a 60×60mm area, ±4% for a 40×40mm area and less than ±2% for a 20×20mm area. We succeeded in using the FTS system to level configuration of the film surface. We suggest that the FTS system is an effective method for making a well flat surface of the film.
東海大学の論文
1999-03-30