A Precision Floating-Gate Mismatch Measurement Technique for Analog Application
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概要
- 論文の詳細を見る
For analog applications, the Metal-Insulator-Metal (MIM) capacitance has to be measured at a much higher resolution than using the conventional methods, i.e. to a sub-femto level. A new robust mismatch measurement technique is proposed, which is more accurate and robust compared to the conventional Floating Gate Capacitance Measurement (FGCM) methods. A capacitance mismatching measurement methodology based on Vs is more stable than that based on Vf because the influence of pre-existing charge in the floating-gate can be cancelled in the slope of ΔVs/ΔVf based on Vs. The accuracy of this method is evaluated through silicon measurement in a 0.13µm technology. It shows that, compared to the ideal value, the average of the new method are within 0.12% compared to 49.23% in conventional method while the standard deviation is within 0.15%.
- 2011-05-01
著者
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JUNG Won-Young
Device Engineering Team, Dongbu HiTek Co., Ltd.
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Kim Jong-min
Technical Engineering Center Dongbu Hitek
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Jung Won-young
Technical Engineering Center Dongbu Hitek
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Kim Taek-soo
Technical Engineering Center Dongbu Hitek
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KIM Taek-Soo
Device Engineering Team, Technical Engineering Center
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Kim Jong-min
Device Technology Team Te Center Dongbu Hitek Co. Ltd.
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KIM Jin-Soo
Device Technology Team, TE Center, Dongbu HiTek Co., Ltd.
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