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United Microelectronics Corporation | 論文
- Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
- Characterization of RF LDMOS Transistors with Different Layout Structures
- The Impact of Mixed-mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe HBTs
- A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
- Electrostatic Discharge Protection under Pad Design for Copper-Low-K VLSI Circuits
- New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
- A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
- The Behavior of Bilateral Latch-Up Triggering in VLSI Electro Static Discharge Damage Protection Circuits
- Charge Loss Due to AC Program Disturbance Stresses in EPROMs
- Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
- Pulsed Characteristics of Microwave SiGe Heterojunction Bipolar Transistors Operated at High Collector Voltages
- High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devi
- Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
- RF MOSFET Characterization by Four-Port Measurement(Microelectronic Test Structures)
- Novel Phenomenon of the Al-1 wt%Si Contacts on the NF_3/Ar Post-Etching-Treated n-Si Substrates
- Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
- Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors
- Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
- Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures
- Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors