Novel Phenomenon of the Al-1 wt%Si Contacts on the NF_3/Ar Post-Etching-Treated n-Si Substrates

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概要

• 論文の詳細を見る

• Post-etching treatment (PET) using an in situ NF_3/Ar low-energy plasma was reported to be efficient in removing the residual layer and defects caused by reactive ion etching (RIE) as well as producing a clean surface conventionally believed suitable for electrical contacts. However, the PET process was found to increase the contact resistance between Al-1 wt%Si and n^+-Si substrate for the first time. It is attributed to the formation of p-type-like Si epitaxy on the n^+-Si substrate and the lower effective surface donor concentration.

• 社団法人応用物理学会の論文
• 1993-09-15

著者

• Cheng Huang

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• CHEN Yeong

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• Chen Yeong

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Juang Miin

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• YEN Po

  United Microelectronics Corporation

• LIN Larry

  United Microelectronics Corporation

関連論文

• Effects of Postetching Treatments on Electrical Characteristics of Thermal Oxides on Reactive-Ion-Etched Silicon Substrates
• Energy Dependence of the Electron-Capture Cross Section of Gap States in Undoped a-Si:H Films
• Novel Structure for Measuring the Density-of-State Distribution of High-Resistivity Semiconductor Films by Isothermal Capacitance Transient Spectroscopy
• Novel Phenomenon of the Al-1 wt%Si Contacts on the NF_3/Ar Post-Etching-Treated n-Si Substrates

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