Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

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概要

• 論文の詳細を見る
• 2004-07-15

著者

• Chen David

  United Microelectronics Corporation

• LAI Jinn-horng

  Department of Electronics Engineering, National Thing Hua University

• GONG Jeng

  Department of Electronics Engineering, National Thing Hua University

• LIAO Tsuoe-Hsiang

  United Microelectronics Corporation

関連論文

• Modeling the Turn-off Characteristics of Insulated-Gate Bipolar Transistor
• Hot Carrier Degradation in Deep Sub-Micron Nitride Spacer Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Transistors
• Electrical Properties of High-Temperature Annealed Boron-Implanted Hg_Cd_Te
• Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors
• Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

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