Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
The impact of shallow-trench-isolation (STI) induced mechanical stress on a device's performance has been studied in many research works. However, there has been a lack of study concerning its temperature dependence. This paper deals with the influence of temperature on the drive current degradation in modern n-channel metal–oxide–semiconductor field-effect transistors (n-MOSFETs) that is caused by STI-induced mechanical stress. The results show that as the operating temperature increases, the drive current degradation induced by STI mechanical stress is slightly reduced. A simple equation is presented for the purpose of quantitative analysis.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-07-15
著者
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Chen David
United Microelectronics Corporation
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LIAO Tsuoe-Hsiang
United Microelectronics Corporation
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Gong Jeng
Department Of Electrical Engineer National Tsing Hua University
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Lai Jinn-horng
Department Of Electrical Engineer National Tsing Hua University
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Chen David
United Microelectronics Corporation, Hsin-Chu, Taiwan 30034, R.O.C.
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Lai Jinn-Horng
Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30055, R.O.C.
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Liao Tsuoe-Hsiang
United Microelectronics Corporation, Hsin-Chu, Taiwan 30034, R.O.C.
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