A General Method of Characterizing Base Resistance of Bipolar Junction Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• In this work, bipolar junction transistors with two separate base terminals and the dc method were used to determine the intrinsic base resistance(R_<int>), the extrinsic base resistance(R_<ext>), and the value of an effective resistance(R_P) that is in parallel with R_<int> of such a device. Transistors with different emitter widths(W_E) while all other device parameters were kept constant are used. The current of one of the base terminals was set to zero to trace the internal base potential of the device. A device simulator was used to analyze the detailed mechanism of the Kirk effect and the current-crowding effect on base resistance. The results show that for current short-width transistors under normal operating conditions the base resistance is mostly influenced by the Kirk effect, not the current-crowding effect.

• 社団法人応用物理学会の論文
• 2000-02-15

著者

• Gong Jeng

  Department Of Electrical Engineer National Tsing Hua University

• Hong Gia

  Department Of Electrical Engineering National Tsin Hwa University

• LU Shin

  Electronic Research and Service Organization, Industrial Technology Research Institute

• Lu Shin

  Electronic Research And Service Organization Industrial Technology Research Institute

関連論文

• Modeling the Turn-off Characteristics of Insulated-Gate Bipolar Transistor
• Hot Carrier Degradation in Deep Sub-Micron Nitride Spacer Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Transistors
• Electrical Properties of High-Temperature Annealed Boron-Implanted Hg_Cd_Te
• An Analytical Method of Analyzing Insulated-Gate Bipolar Transistor Characteristics in Terms of Applied Terminal Voltages : Semiconductors
• The 1/f Noise Associated with Electromigration in AlSiCu Thin Films
• A Simple Method to Analyze the Electrical Properties of High Power Lateral Double-Diffused Metal-Oxide-Semiconductor Transistors
• The Effect of Band Gap Narrowing and Two-Dimensional Grain on High-Temperature Properties of Polysilicon Emitter Bipolar Junction Transistors
• A General Method of Characterizing Base Resistance of Bipolar Junction Transistors
• Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Investigation of Positive and Negative Bias Temperature Instability of High-\kappa Dielectric Metal Gate Metal--Oxide--Semiconductor-Field-Effect-Transistors by Random Telegraph Signal

スポンサーリンク