Lai Jinn-horng | Department Of Electrical Engineer National Tsing Hua University

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概要

• 同名の論文著者
• Department Of Electrical Engineer National Tsing Hua Universityの論文著者

関連著者

• Gong Jeng

  Department Of Electrical Engineer National Tsing Hua University

• Lai Jinn-horng

  Department Of Electrical Engineer National Tsing Hua University

• Lin Sun-yun

  Fab-3 Engineering-i Dept. Taiwan Semiconductor Manufacturing Co. Ltd.

• Chen David

  United Microelectronics Corporation

• Huang Kai-ye

  Department Of Electronics Engineering National Thing Hua University

• Tsai Jun-un

  Department Of Electronics Engineering National Thing Hua University

• LAI Jinn-horng

  Department of Electronics Engineering, National Thing Hua University

• GONG Jeng

  Department of Electronics Engineering, National Thing Hua University

• YANG Fu-Jei

  Fab-3 Engineering-I Dept., Taiwan Semiconductor Manufacturing Co., Ltd.

• LIAO Tsuoe-Hsiang

  United Microelectronics Corporation

• Gong Jeng

  Department Of Electronics Engineering National Thing Hua University

• Huang Tsung-yi

  Department Of Electrical Engineer National Tsing Hua University

• Yang Fu-jei

  Fab-3 Engineering-i Dept. Taiwan Semiconductor Manufacturing Co. Ltd.

• Lai Jinn-horng

  Department Of Electronics Engineering National Thing Hua University

• Tsai J‐l

  National Tsing Hua Univ. Hsinchu Twn

• Chen David

  United Microelectronics Corporation, Hsin-Chu, Taiwan 30034, R.O.C.

• Lai Jinn-Horng

  Department of Electrical Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30055, R.O.C.

• Tsai Jun-lin

  Department of Electronics Engineering, National Thing Hua University

• Liao Tsuoe-Hsiang

  United Microelectronics Corporation, Hsin-Chu, Taiwan 30034, R.O.C.

• Gong Jeng

  Department of Electrical Engineer, National Tsing Hua University

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著作論文

• Hot Carrier Degradation in Deep Sub-Micron Nitride Spacer Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Transistors
• An Analytical Method of Analyzing Insulated-Gate Bipolar Transistor Characteristics in Terms of Applied Terminal Voltages : Semiconductors
• Temperature Dependence of Shallow-Trench-Isolation Mechanical Stress on n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors

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