An Analytical Method of Analyzing Insulated-Gate Bipolar Transistor Characteristics in Terms of Applied Terminal Voltages : Semiconductors
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概要
- 論文の詳細を見る
An analytical method of analyzing insulated-gate bipolar transistor (IGBT) current-voltage characteristics is established in this paper. Important internal device parameters such as the injected carrier concentrations, electron and hole current densities and depletion length of the drift region are calculated as functions of the terminal voltages. The parasitic transistor current gains α_<npn> and α_<pnp> are also extracted as functions of applied voltages. The temperature effect on both latch-up criteria can also be predicted from this method.
- 社団法人応用物理学会の論文
- 2001-08-15
著者
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Gong Jeng
Department Of Electrical Engineer National Tsing Hua University
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Huang Tsung-yi
Department Of Electrical Engineer National Tsing Hua University
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Lai Jinn-horng
Department Of Electrical Engineer National Tsing Hua University
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Gong Jeng
Department of Electrical Engineer, National Tsing Hua University
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