The 1/f Noise Associated with Electromigration in AlSiCu Thin Films
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概要
- 論文の詳細を見る
Noise measurements were performed on electromigration-damaged single-layer AlSiCu films, that show no resistance change and on multilayer AlSiCu/TiW films that show obvious resistance increase before the samples open. The experimental results showed that single-layer AlSiCu films have 1/f noise only, and no 1/f^2 noise is observed during the entire stress period. Moreover, the 1/f noise increases drastically shortly before the samples open. For multilayer samples, 1/f^2 noise was observed during the stress period, and increased with the stress current density. This result implies that the theory of resistance-drift-induced 1/f^2 noise is valid in electromigration-damaged metal thin films.
- 社団法人応用物理学会の論文
- 1999-01-15
著者
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CHENG Yu
Department of Automation, Tsinghua University
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YEE Hoshin
Department of Electrical Engineering, National Taipei University of Technology
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Yee H
Department Of Electrical Engineering National Taipei University Of Technology
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Yee Hoshin
Department Of Electrical Engineering National Taipei University Of Technology
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Gong Jeng
Department Of Electrical Engineering National Tsing Hua University
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Gong Jeng
Department Of Electrical Engineer National Tsing Hua University
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LIOU Der-Ming
Department of Electronic Engineering Technology, Ming Hsin Institute of Technology
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Liou Der-ming
Department Of Electronic Engineering Technology Ming Hsin Institute Of Technology
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Cheng Yu
Department Of Automation Tsinghua University
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Cheng Yu
Department Of Electrical Engineering National Tsing Hua University
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