The Effect of Band Gap Narrowing and Two-Dimensional Grain on High-Temperature Properties of Polysilicon Emitter Bipolar Junction Transistors

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概要

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• A two-dimensional model with grain boundary traps for polycrystalline silicon is used in this study to analyze the temperature effects of polysilicon emitter bipolar junction transistors (PEBJTs). The base current, the collector current, and the bandgap narrowing of the transistor have been examined in the temperature range of 25℃ to 150℃. The experimental results agreed well with the theoretical simulations.

• 社団法人応用物理学会の論文
• 1999-08-15

著者

• Gong Jeng

  Department Of Electrical Engineer National Tsing Hua University

• Gong Jeng

  Department Of Electrical Engineering National Tsin Hwa University

• Lu S

  Industrial Technol. Res. Inst. Hsin‐chu Twn

• Lin Jian

  Department Of Electrical Engineering National Yunlin University Of Science And Technology

• Hong Gia

  Department of Electrical Engineering, National Tsin Hwa University

• Lu Shu

  ERSO-ITRT Electronic Research and Service Organization, Industrial Technology, Research Institute

• Hong Gia

  Department Of Electrical Engineering National Tsin Hwa University

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• The Effect of Band Gap Narrowing and Two-Dimensional Grain on High-Temperature Properties of Polysilicon Emitter Bipolar Junction Transistors
• A General Method of Characterizing Base Resistance of Bipolar Junction Transistors
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